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IL4116/ IL4117/ IL4118
Vishay Semiconductors
Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Very Low Input Current
Features
* High Input Sensitivity: IFT = 1.3 mA, PF = 1.0; IFT = 3.5 mA, Typical PF < 1.0 * Zero Voltage Crossing * 600/700/800 V Blocking Voltage * 300 mA On-State Current * High dV/dt 10,000 V/sec. * Inverse Parallel SCRs Provide Commutating dV/dt > 10 kV/s * Isolation Test Voltage 5300 VRMS * Very Low Leakage < 10 A * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
A1 6 MT2
C2 ZCC
5 NC
NC 3
4 MT1
18099
Agency Approvals
* UL1577, File No. E52744 System Code H or J, Double Protection * CSA 93751 * BABT/ BSI IEC60950 IEC60065 * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * FIMKO
Applications
Solid state relays Lighting controls Temperature controls Solenoid/valte controls AC motor drives/starters
The IL4116/ IL4117/ IL4118 uses zero cross line voltage detection circuit witch consists of two enhancement MOSFETS and a photodiode. The inhibit voltage of the network is determined by the enhancement voltage of the N-channel FET. The P-channel FET is enabled by a photocurrent source that permits the FET to conduct the main voltage to gate on the Nchannel FET. Once the main voltage can enable the N-channel, it clamps the base of the phototransistor, disabling the first stage SCR predriver. The blocking voltage of up to 800 V permits control of off-line voltages up to 240 VAC, with a safety factor of more than two, and is sufficient for as much as 380 VAC. Current handling capability is up to 300 mA RMS continuous at 25 C. The IL4116/ IL4117/ IL4118 isolates low-voltage logic from 120, 240, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays. Applications include solid-state relays, industrial controls, office equipment, and consumer appliances.
Description
The IL4116/ IL4117/ IL4118 consists of an AlGaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semi - conductors devices are assembled in a six pin 300 mil dual in-line package. High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 1.3 mA(DC).
Document Number 83628 Rev. 1.4, 26-Apr-04 www.vishay.com 1
IL4116/ IL4117/ IL4118
Vishay Semiconductors Order Information
Part IL4116 IL4117 IL4118 IL4116-X006 IL4116-X007 IL4116-X009 IL4117-X007 IL4118-X006 IL4118-X007 IL4118-X009 Remarks 600 V VDRM, DIP-6 700 V VDRM, DIP-6 800 V VDRM, DIP-6 600 V VDRM, DIP-6 400 mil (option 6) 600 V VDRM, SMD-6 (option 7) 600 V VDRM, SMD-6 (option 9) 700 V VDRM, SMD-6 (option 7) 800 V VDRM, DIP-6 400 mil (option 6) 800 V VDRM, SMD-6 (option 7) 800 V VDRM, SMD-6 (option 9)
For additional information on the available options refer to Option Information.
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage Forward current Surge current Power dissipation Derate linearly from 25 C Thermal resistance Rth Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 1.33 750 Unit V mA A mW mW/C C/W
Output
Parameter Peak off-state voltage Test condition Part IL4116 IL4117 IL4118 RMS on-state current Single cycle surge Power dissipation Derate linearly from 25 C Thermal resistance Rth Pdiss Symbol VDRM VDRM VDRM IDRM Value 600 700 800 300 3.0 500 6.6 150 Unit V V V mA A mW mW/C C/W
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Document Number 83628 Rev. 1.4, 26-Apr-04
IL4116/ IL4117/ IL4118
Vishay Semiconductors Coupler
Parameter Lead soldering temperature Creepage distance Clearance Storage temperature Operating temperature Isolation test voltage Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Tstg Tamb VIO RIO RIO 5 sec. Test condition Symbol Tsld Value 260 7.0 7.0 - 55 to + 150 - 55 to + 100 5300 1012 1011 Unit C mm mm C C VRMS
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Tamb=25C Parameter Forward voltage Breakdown voltage Reverse current Capacitance Thermal resistance, junction to lead Test condition IF = 20 mA IR = 10 A VR = 6.0 V VF = 0 V, f = 1.0 MHz Symbol VF VBR IR CO Rthjl 6.0 Min Typ. 1.3 30 0.1 40 750 10 Max 1.5 Unit V V A pF C/W
Output
Parameter Test condition Part IL4116 IL4117 IL4118 Off-state voltage ID(RMS) = 70 A IL4116 IL4117 IL4118 Off-state current On-state voltage On-state current Surge (non-repetitive, on-state current) Holding current Latching current LED trigger current Zero cross inhibit voltage Critical state of rise: off-state voltage VD = 600, Tamb = 100 C IT = 300 mA PF = 1.0, VT(RMS) = 1.7 V f = 50 Hz VT = 3.0 V VT = 2.2 V VAK = 5.0 V IF = Rated IFT VRM, VDM = 400 VAC VRM, VDM = 400 VAC, Tamb = 80 C Symbol VDRM VDRM VDRM VD(RMS) VD(RMS) VD(RMS) ID(RMS) VTM ITM ITSM IH IL IFT VIH dV(MT)/dt dV(MT)/dt 10,000 2000 65 5.0 0.7 15 1.3 25 Min 600 700 800 424 494 565 Typ. 650 750 850 460 536 613 10 1.7 100 3.0 300 3.0 200 Max Unit V V V V V V A V mA A A mA mA V V/s V/s Repetitive peak off-state voltage IDRM = 100 A
Document Number 83628 Rev. 1.4, 26-Apr-04
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IL4116/ IL4117/ IL4118
Vishay Semiconductors
Parameter Commutating voltage Test condition VRM, VDM = 400 VAC VRM, VDM = 400 VAC, Tamb = 80 C Commutating current Thermal resistance, junction to lead IT = 300 mA Part Symbol dV(COM)/dt dV(COM)/dt dI/dt Rthjl Min 10,000 2000 100 150 Typ. Max Unit V/s V/s A/ms C/W
Coupler
Parameter Critical state of rise of coupler input-output voltage Capacitance (input-output) Common mode coupling capacitance Test condition IT = 0 A, VRM = VDM = 424 VAC f = 1.0 MHz, VIO = 0 V Symbol dV(IO)/dt CIO CCM Min 10,000 0.8 0.01 Typ. Max Unit V/s pF pF
Switching Characteristics
Parameter Turn-on time Turn-off time Test condition VRM = VDM = 424 VAC PF = 1.0, IT = 300 mA Symbol ton toff Min Typ. 35 50 Max Unit s s
Typical Characteristics (Tamb = 25 C unless otherwise specified)
35
V F - Forward Voltage - V
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 TA = 100C TA = 25C TA = -55C
IF - LED Current - mA
30 25 20 15 10 5 0 1.0 1.1 1.2 1.3 VF - LED Forward Voltage - V 1.4
1 10 I F - Forward Current - mA
100
iil4116_01
iil4116_02
Figure 1. LED Forward Current vs.Forward Voltage
Figure 2. Forward Voltage vs. Forward Current
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Document Number 83628 Rev. 1.4, 26-Apr-04
IL4116/ IL4117/ IL4118
Vishay Semiconductors
10000
If(pk) - Peak LED Current - mA
Duty Factor 1000 .005 .01 .02 .05 .1 .2 .5 t DF = /t
100
10 10 -6
iil4116_03
10 -5
10 -4 10 -3 10 -2 10 -1 t -LED Pulse Duration - s
10 0
101
iil4116_06
PLED - LED Power - mW
TA - Ambient Temperature - C
Figure 3. Peak LED Current vs. Duty Factor, Tau
Figure 6. Maximum Output Power Dissipation
150
Power Factor Considerations
A snubber isn't needed to eliminate false operation of the TRIAC driver because of the IL4116/ IL4117/ IL4118 high static and commutating dV/dt with loads between 1 and 0.8 power factors. When inductive loads with power factors less than 0.8 are being driven, include an RC snubber or a single capacitor directly across the device to damp the peak commutating dV/dt spike. Normally a commutating dV/dt causes a turning-off device to stay on due to the stored energy remaining in the turn-off device. But in the case of a zero voltage crossing optotriac, the commutating dV/dt spikes can inhibit one half of the TRIAC from turning on. If the spike potential exceeds the inhibit voltage of the zero cross detection circuit, half of the TRIAC will be held-off and not turnon. This hold-off condition can be eliminated by using a snubber or capacitor placed directly across the optotriac as shown in Figure 7. Note that the value of the capacitor increases as a function of the load current. The hold-off condition also can be eliminated by providing a higher level of LED drive current. The higher LED drive provides a larger photocurrent which causes. the phototransistor to turn-on before the commutating spike has activated the zero cross network. Figure 8 shows the relationship of the LED drive for power factors of less than 1.0. The curve shows that if a device requires 1.5 mA for a resistive load, then 1.8 times (2.7 mA) that amount would be required to control an inductive load whose power factor is less than 0.3.
PLED - LED Power - mW
100
50
0 -60
iil4116_04
-40
-20 0 20 40 60 T - Ambient Temperature - C A
80
100
Figure 4. Maximum LED Power Dissipation
IT - On-State Current - mA(RMS)
iil4116_05
VT - On-State Voltage - V(RMS)
Figure 5. On-State Terminal Voltage vs. Terminal Current
Document Number 83628 Rev. 1.4, 26-Apr-04
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IL4116/ IL4117/ IL4118
Vishay Semiconductors
Cs (F)=0.0032 (F)* 10^(0.0066IL (mA)
Cs - Shunt Capacitance - F NIFth - Normalized LED Trigger Current
IFth Normalized to IFth @ PF = 1.0
PF = 0.3 IF = 2.0 mA
PF - Power Factor
iil4116_07
IL - Load Current - mA(RMS)
iil4116_08
Figure 7. Shunt Capacitance vs. Load Current vs. Power Factor
Figure 8. Normalized LED Trigger Current
Package Dimensions in Inches (mm)
pin one ID
3 .248 (6.30) .256 (6.50) 4
2
1
5
6
ISO Method A
.335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55)
i178004
.048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81)
.300 (7.62) typ.
18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81)
.114 (2.90) .130 (3.0)
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Document Number 83628 Rev. 1.4, 26-Apr-04
IL4116/ IL4117/ IL4118
Vishay Semiconductors
Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.180 (4.6) .160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX.
.012 (.30) typ.
.020 (.51) .040 (1.02)
.315 (8.00) min.
15 max.
18450
Document Number 83628 Rev. 1.4, 26-Apr-04
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IL4116/ IL4117/ IL4118
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83628 Rev. 1.4, 26-Apr-04

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